Abstract:This Letter reports low-temperature (700 °C) growth of heavily Si-doped GaN (n ++ GaN) by metal-organic chemical vapor deposition with a resistivity as low as 1.9 × 10 −4 Ω·cm and an atomically smooth surface. Indium adatoms added during the growth of n ++ GaN play an important role in improving both the surface morphology and free electron concentration. On the one hand, acting as surfactant, they greatly boost the adatoms surface mobility at low growth temperature and mitigate Si-induced anti-surfactant effect. On the other hand, they can effectively suppress the formation of compensating defects, thus contributing to an extremely high electron concentration of 2.8 × 10 20 cm −3 . This high-quality n ++ GaN was further applied to the realization of Ohmic contacts with an ultra-low contact resistance for AlGaN/GaN high electron mobility transistors. The carrier gas was carefully modulated for the selective area epitaxy (SAE) of n ++ GaN to facilitate the nucleation of GaN on the dielectric mask, which effectively suppressed the undesired mass transport and resulted in a uniform SAE of n ++ GaN in the recessed source/drain regions. A nearly defect-free interface between the n ++ GaN and two-dimensional electron gas channel has been also realized, and the resistance induced by the interface was only 0.03 Ω·mm. As a result, an ultra-low contact resistance of 0.07 Ω·mm has been realized. This work lays a solid foundation for further improving the performance of GaN-based RF and power devices.

Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Ohmic Contact to AlGaN/GaN HEMT with Electrodes in Contact with Heterostructure Interface

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

High thermal stability Ohmic contact for GaN-based devices

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Fabrication and Formation Mechanisms of Ohmic Conducts with Low Annealing Temperature for GaN/AlN Superlattice Barrier HEMTs

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an 'Ohmic-Before-Passivation' Process

CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Design and Fabrication of Ohmic Contact on AlGaN/GaN Heterostructure

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Ohmic Contact for InP-Based HEMTs