Abstract:The realization of ohimic contact to n-GaN is usually achieved by using Ti/Al bilayer electrodes with high temperature annealing. Nevertheless, the process of high temperature annealing may destruct the (electronic) structure of devices, such as quantum well and superlattice structure. The ultimate objective of this research work is to obtain low resistance ohimic contact to n-GaN without high temperature annealing, thus (avoiding) the destruction of electronic structure effectively. In the research both nonalloyed condition and low temperature annealing are applied. Under nonalloyed condition, we firstly use alloyed TiAl_3 as contact electrode material directly on n-GaN with carrier concentration of 2×10~(18) cm~(-3). Compared with conventional Ti/Al bilayer structure, alloyed TiAl_3 structure facilitates the realization of nonalloyed n-type ohmic contact. However, with annealing at 500 ℃, the contact behavior of Ti/Al bilayer is improved rapidly and achieves ohmic, which is lower than the temperature assumed in some papers. After applying RIE process, both Ti/Al bilayer and TiAl_3 alloyed electrodes behave ohmic, which indicates that the surface of GaN is cleaning, thus intimate contact of Ti and GaN is vital to (achieve) ohmic contact to n-GaN. In the further experiment, Ti/TiAl_3 bilayer structure is introduced to compare with TiAl_3 alloyed structure. Both of the two structures behave ohmic with RIE process, yet TiAl_3 alloyed shows lower contact resistance, and excess Ti has no obvious effect to contact behavior under nonalloyed condition. After annealing with different temperature, Ti/TiAl_3 bilayer structure tends to form an ohmic contact with lower contact resistance. It proves that excess Ti is activated to form ohmic contact at high temperature annealing. Further analysis implies both of the nitrogen vacancies and TiAl_3 mechanisms play a critical role to form a low contact resistance ohmic contact to n-GaN, under the condition of nonalloyed or low annealing temperature. Accordingly, based on alloyed TiAl_3 structure, Ti/TiAl_3/Ni/Au structure is designed, which decreases the contact resistance significantly, and the specific contact resistance of 3×10~(-5) Ω·cm~2 is obtained with CTLM measurement.The introduction of TiAl_3 alloyed material can make a role as high temperature annealing in the aspect of forming TiAl_3 at the interface. With a certain thickness ratio, Ti/TiAl_3 can achieved low ohmic contact with low temperature annealing. Therefore, TiAl_3 alloyed will be promising in the application field of photoelectron and micro-electron devices that require strict temperature conditions.

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