Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer As Recess Mask

An "Ohmic-First" Self-Terminating Gate-Recess Technique for Normally-off Al2O3/GaN MOSFET

Normally OFF GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiN X Passivation and High-Temperature Gate Recess

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

High-performance Fully-Recessed Enhancement-Mode GaN MIS-FETs with Crystalline Oxide Interlayer

Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics