Abstract:A novel method to fabricate the oxidized silicon-terminated (C–Si–O) diamond metal-oxide-semi- conductor field-effect transistors (MOSFETs) by replacing the retained SiO2 masks with an atomic layer deposition (ALD)-Al2O3 film as the main gate insulator was proposed for the first time. Compositional analysis across the SiO2 masks and on the air-exposed C–Si–O (111) diamond surface has been carried out by utilizing secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) techniques, respectively. Furthermore, we revealed that, under selectively epitaxial growth of diamond through a SiO2 mask, a carbon-rich film was formed on SiO2 and C–Si bonding was realized at the SiO2/(111) diamond interface. The fabricated device with a source and drain distance (${L}_{SD}$ ) of $3 ,mu ext{m}$ exhibits a distinct threshold voltage (${V}_{TH}$ ) of −5.6 V and a maximum drain current density (${I}_{D\_{}{MAX}}$ ) up to −311 mA/mm, which is a record value among normally-off single-crystalline diamond MOSFETs to date. In the case of having ALD-Al2O3 as the main gate insulator, normally-off operation of the C–Si–O diamond MOSFETs has a stark contrast with the typically normally-on performance of the hydrogen-terminated (C–H) diamond MOSFETs, which is mainly due to the smaller negative electron affinity of C–Si–O diamond compared with that of C–H diamond. These results indicate that the proposed C–Si–O (111) diamond MOSFETs with excellent normally-off operation and large drain current density are promising to fulfill the requirements of fail-safe and current drive capabilities in power device applications.

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

900 V/1.6 ${\rm M}\omega\cdot{\rm Cm}^{2}$ Normally off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer As Recess Mask

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Characterization of 880 V Normally off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Normally-off trench JFET technology in 4H silicon carbide

An "Ohmic-First" Self-Terminating Gate-Recess Technique for Normally-off Al2O3/GaN MOSFET

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process