Abstract:A novel method to fabricate the oxidized silicon-terminated (C–Si–O) diamond metal-oxide-semi- conductor field-effect transistors (MOSFETs) by replacing the retained SiO2 masks with an atomic layer deposition (ALD)-Al2O3 film as the main gate insulator was proposed for the first time. Compositional analysis across the SiO2 masks and on the air-exposed C–Si–O (111) diamond surface has been carried out by utilizing secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) techniques, respectively. Furthermore, we revealed that, under selectively epitaxial growth of diamond through a SiO2 mask, a carbon-rich film was formed on SiO2 and C–Si bonding was realized at the SiO2/(111) diamond interface. The fabricated device with a source and drain distance (${L}_{SD}$ ) of $3 ,mu ext{m}$ exhibits a distinct threshold voltage (${V}_{TH}$ ) of −5.6 V and a maximum drain current density (${I}_{D\_{}{MAX}}$ ) up to −311 mA/mm, which is a record value among normally-off single-crystalline diamond MOSFETs to date. In the case of having ALD-Al2O3 as the main gate insulator, normally-off operation of the C–Si–O diamond MOSFETs has a stark contrast with the typically normally-on performance of the hydrogen-terminated (C–H) diamond MOSFETs, which is mainly due to the smaller negative electron affinity of C–Si–O diamond compared with that of C–H diamond. These results indicate that the proposed C–Si–O (111) diamond MOSFETs with excellent normally-off operation and large drain current density are promising to fulfill the requirements of fail-safe and current drive capabilities in power device applications.

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

900 V/1.6 ${\rm M}\omega\cdot{\rm Cm}^{2}$ Normally off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

An "Ohmic-First" Self-Terminating Gate-Recess Technique for Normally-off Al2O3/GaN MOSFET

High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

GaSb P-Channel Metal-Oxide-semiconductor Field-Effect Transistor and Its Temperature Dependent Characteristics

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With A/mm Leakage Current and ON/OFF Current Ratio

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric