Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

High-performance Fully-Recessed Enhancement-Mode GaN MIS-FETs with Crystalline Oxide Interlayer

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Atomic-scale Identification of Crystalline GaON Nanophase for Enhanced GaN MIS-FET Channel

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs

Gan-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition Sinx As Gate Dielectric

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiN<sub><i>x</i></sub>/PEALD-AlN Dual Gate Dielectric and <i>In-Situ</i> H<sub>2</sub>(15%)/N<sub>2</sub>(85%) Plasma Pretreatment

Normally OFF GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiN X Passivation and High-Temperature Gate Recess

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment