NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication
Maolin Pan,Qiang Wang,Luyu Wang,Penghao Zhang,Yannan Yang,Lewen Qian,Xinlin Xie,Hai Huang,Saisheng Xu,Chunlei Wu,Chen Wang,Min Xu,David Wei Zhang
DOI: https://doi.org/10.1016/j.mssp.2023.107761
IF: 4.1
2023-11-01
Materials Science in Semiconductor Processing
Abstract:In this work, an NH3/N2 plasma surface treatment technique has been developed to replenish the nitrogen vacancy on the etched AlGaN surface during the p-GaN high-electron-mobility transistors (HEMTs) fabrication. The efficacy of the treatment is confirmed through X-ray photoelectron spectroscopy (XPS) surface characterization. To evaluate the impact of the plasma treatment, three sets of samples with varying etching times are prepared. Remarkably, the drain current of the most severely over-etched device can be recovered from 148 to over 300 mA/mm, accompanied by improved current collapse immunity, a threshold voltage of +1.5 V, and an Ion/Ioff ratio of over 1 × 108. By employing this technique, p-GaN HEMTs can now be fabricated in a uniform and consistent manner.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied