Abstract:AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlxGa1−xN (x = 0.24, 0.34, 0.47) epilayers grown on c-plane patterned sapphire substrate with GaN template by the metal organic chemical vapor deposition (MOCVD). It is demonstrated that the increase of the aluminum content leads to the deterioration of the surface morphology and crystal quality of the AlGaN epitaxial layer. The dislocation densities of AlxGa1−xN epilayers were determined from symmetric and asymmetric planes of the ω-scan rocking curve and the minimum value is 1.01 × 109 cm−2. The (101 ̄5) plane reciprocal space mapping was employed to measure the in-plane strain of the AlxGa1−xN layers grown on GaN. The surface barrier heights of the AlxGa1−xN samples derived from XPS are 1.57, 1.65, and 1.75 eV, respectively. The results of the bandgap obtained by PL spectroscopy are in good accordance with those of XRD. The Hall mobility and sheet electron concentration of the samples are successfully determined by preparing simple indium sphere electrodes.

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Improved Ohmic Contacts to Plasma Etched High Al Fraction N-Algan by Active Surface Pretreatment

Effect of Surface Treatments on Schottky Contact on N-Alxga1−xn/gan Heterostructures

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Improved Characteristics of (112‾2) Al0.62Ga0.38N Film Grown with Pulsed Flow Growth Technique

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Improvement of Atomic-Layer-Deposited Al 2 O 3 /gaas Interface Property by Sulfuration and NH 3 Thermal Nitridation

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Remarkable Enhancement in Photocurrent of In0.20ga0.80n Photoanode by Using an Electrochemical Surface Treatment

The Effect of Wet Chemical Etching by KOH Solution to the Contact on the Solar-Blind Al 0.65 Ga 0.35 N Material

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Surface Treatment

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment