Abstract:In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH3-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH2, NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH2 radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH3/Ar plasma PEALD involving oxygen participation or not is also discussed in the study.

Improved Characteristics of (112‾2) Al0.62Ga0.38N Film Grown with Pulsed Flow Growth Technique

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

High-quality AlN growth: a detailed study on ammonia flow

Enhanced performance of (112 ̄2) plane p-AlGaN grown with indium surfactant

Improved Characteristics of (11 2‾2) Plane AlGaN Films Grown on SiNx Interlayer

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Effect of NH3-flow modulation on the morphological properties of nonpolar a-plane AlGaN epilayers

Influences of nitridation treatment on the properties of semi-polar (11 2 ̅2) plane AlGaN films

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Effect of AlN/GaN supercycle ratio on properties of Al x Ga 1−x N films using super-cycle plasma enhanced atomic layer deposition

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd