Abstract:The alloy AlxGa1−xN was grown by metal-organic chemical vapor deposition (MOCVD) using a high-temperature AlN interlayer on a thick GaN template. The Al composition (x) of the AlxGa1−xN was varied in the range 0.13⩽x⩽0.8. The in-situ reflectance spectra indicate that the growth process of AlGaN alloys is dominated by trimethylgallium (TMGa) molar flux when the molar flux of trimethylaluminium (TMAl) is kept constant. The Al compositions and growth rates of AlGaN alloys were determined by Rutherford backscattering, which indicates that the incorporation efficiency of TMAl is improved remarkably by decreasing the TMGa molar flux. The crystalline quality of these AlGaN alloys is evaluated by measuring the symmetric (002) and asymmetric (102) ω-scan X-ray diffraction peak widths. The best crystalline quality, among these AlxGa1−xN alloys, is for an Al composition of x=0.54 where the full-width at half-maximums of the AlGaN (002) and (102) diffraction peaks are 265 and 797arcsec, respectively. This conclusion is consistent with the surface morphology of the AlGaN alloys probed by atomic force microscopy. Room temperature cathodoluminescence spectra show pronounced near band edge emission from these AlGaN alloys. The optical band gaps (Eg) are found to deviate from linear interpolation between EgGaN and EgAlN with a bowing parameter b=0.89.

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Properties of Mg-Doped AlGaN Films

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Growth and Electrical Properties of High-Quality Mg-doped P-Type Al0.2Ga0.8N Films

Study on MOCVD-Grown Mg-Doped GaN by Annealing Treatment

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Growth and Characteristics of Epitaxial Al X Ga 1− X N by MOCVD

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Characterization of Mg-Doped Gan

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Crystal structures and stabilities of AlxGa1-xN and P-Type AlxGa1-xN with different Al compositions: A density functional study

Effects of Doping on the Crystalline Quality and Composition Distribution in Ingan/Gan Structure Grown by Mocvd

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Cathoderayluminescence of AlxGa1-xN and Mg-doped Al0.54Ga0.46N

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics