Abstract:The semipolar (11 2 ̅ 2) plane Mg-doped p-Al 0.42 Ga 0.58 N epi-layers were successfully deposited on (10 1 ̅ 0) m-plane sapphire substrates with metal organic chemical vapor deposition technology. The effects of Cp 2 Mg molar flow rate on the structural, optical, and electrical properties of p-Al 0.42 Ga 0.58 N epitaxial layer were extensively studied. The randomly distributed Mg atoms and/or clusters that partially covered the growth surface were verified to act as an island-like mask to block the propagation of dislocations along the growth direction, resulting in a significant improvement in the crystalline quality of the semipolar Mg-doped p-AlGaN epi-layers. Moreover, two emission peaks with novel behavior were observed in the photoluminescence spectrum and identified to be originated from the transition between the conduction band and the Mg-related shallow acceptor energy level, and the deep Mg-induced compensation donor and the Mg acceptor pair-related transition, respectively. In addition, a hole concentration as high as 1.03 × 10 17 cm −3 and a resistivity as low as 12.8 Ω cm were achieved for the semipolar Mg-doped p-Al 0.42 Ga 0.58 N epi-layer grown with the optimized Cp 2 Mg molar flow rate in this study.

Properties of Mg-Doped AlGaN Films

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Cathoderayluminescence of AlxGa1-xN and Mg-doped Al0.54Ga0.46N

Electrical Property and Annealing Characteristics of Heavy Mg-doped GaN Films

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Growth and Properties of Mg-doped In-polar InN Films

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Doping Characteristics of Mg in InGaAlP and GaP

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films