Abstract:Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

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Properties of Mg-Doped AlGaN Films

Effect of rapid thermal annealing on the Mg-doped GaN/Si film

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

EFFECT OF RAPID THERMAL ANNEALING ON THE <font>Mg</font>-DOPED <font>GaN/Si</font> FILM

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Property Manipulation Through Pulsed Laser Annealing in High Dose Mg-implanted GaN

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Influence of Thermal Annealing on Properties of InGaN Films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

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High‐Temperature Annealing of AlGaN