High‐Temperature Annealing of AlGaN

Sylvia Hagedorn,Taimoor Khan,Carsten Netzel,Carsten Hartmann,Sebastian Walde,Markus Weyers
DOI: https://doi.org/10.1002/pssa.202000473
2020-10-07
physica status solidi (a)
Abstract:<p>In the last few years high temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. In this study, the example of Al<sub>0.77</sub>Ga<sub>0.23</sub>N is used to investigate whether annealing can also improve the material quality of the ternary alloy. A detailed analysis of the influence of annealing temperature on structural and optical material properties is presented. It was found that with increasing annealing temperature the threading dislocation density can be lowered from an initial value of 6.0×10<sup>9</sup> cm<sup>−2</sup> down to 2.6×10<sup>9</sup> cm<sup>−2</sup>. Ga depletion at the AlGaN surface and Ga diffusion into the AlN buffer layer is observed. After annealing the defect luminescence between 3 eV and 4 eV is increased, accompanied by an increase of the oxygen concentration by about two orders of magnitude. Furthermore, due to annealing optical absorption at 325 nm (3.8 eV) occurs, which increases with increasing annealing temperature. It is assumed that the reason for this decrease in UV transmittance is the increasing number of vacancies caused by the removal of group‐III and N atoms from the AlGaN lattice during annealing.</p><p>This article is protected by copyright. All rights reserved.</p>
What problem does this paper attempt to address?