Abstract:High-quality aluminum nitride (AlN) films are considered to be the key to the preparation of excellent UV optoelectronic devices. In this paper, metal nitride vapor phase epitaxy (MNVPE) and face-to-face annealing were combined to study the changes in crystal quality, internal stress, and optical properties of AlN films with different V/III ratios after high-temperature annealing with theoretical explanations. X-ray diffraction was used to characterize the film quality. The best quality of AlN films was found at V/III = 4420. After annealing at 1675 C-degrees for 1 h, the quality of AlN films was significantly improved, with the AlN film at V/III = 4420 still having the best quality after annealing, and the full width at half-maximum of the (002) rocking curve was 521 arcsec. Combined with scanning electron microscopy tests, high-temperature annealing led to grain growth in the AlN films, promoting the reduction of grain boundaries. According to the Raman spectroscopy test results, the internal stresses of the annealed AlN films were released. The UV-visible spectroscopy results showed that annealing improved the transmittance and band gap of the films, thus optimizing the optical properties of the AlN films. This work enriches the mechanism of annealing to improve film quality and explores the relationship between the V/III ratio parameter of MNVPE and high-temperature annealing, which is of great significance for preparing high-quality AlN films.

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

High‐Temperature Annealing of AlGaN

Effects of Annealing on Properties of N-implanted ZnO: Al Thin Films by Sol-gel Technique

Relationship Between Annealing and V/III Ratios During MNVPE of AlN Films

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Annealing Effects On The Field Emission Properties Of Aln Nanorods

Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

Effects of Eu Ions Dose and Annealing Temperature on the Structural and Optical Properties of Eu-implanted AlN Thin Films

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Effect of Annealing on Photoluminescence Properties of Neon Implanted GaN

Effects of Rapid Thermal Annealing on the Properties of Aln Films Deposited by Peald on Algan/Gan Heterostructures

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

Effect of Annealing on Photoluminescence of ZnO: Al Thin Films Prepared by Sol-Gel Method

Effect of Substrate Type on the Lattice Structure of AlN Thin Films Annealed at High Temperature