Crystal quality evolution of AlN films via high-temperature annealing under ambient N2 conditions

M. X. Wang,F. J. Xu,N. Xie,Y. H. Sun,B. Y. Liu,Z. X. Qin,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1039/c8ce00967h

IF: 3.756

2018-01-01

CrystEngComm

Abstract:The crystal quality evolution of AlN films via high-temperature (HT) annealing under nitrogen is investigated.

What problem does this paper attempt to address?

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

M. X. Wang,F. J. Xu,N. Xie,Y. H. Sun,B. Y. Liu,Z. X. Qin,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1039/c8ce00967h

IF: 3.756

2018-01-01

CrystEngComm

Abstract:The crystal quality evolution of AlN films via high-temperature (HT) annealing under nitrogen is investigated. It is found that the best crystal quality can be realized using an optimized combination of the annealing temperature at 1700 degrees C and an AlN thickness of 540 nm, respectively. Thus the X-ray diffraction omega-scan full width at half maximum (FWHM) values of 59 and 284 arcsec for (0002) and (10 (1) over bar2) diffractions were achieved, respectively. It is verified that the significant reduction in the threading dislocation density (TDD) via HT annealing starts from the interface zone between AlN and sapphire anterior to the zone far from the interface, which is caused by less energy being required to decrease the larger twist angle among the columns in the interface zone. Benefiting from the low-TDD annealed AlN template, the internal quantum efficiency of the 282-nm AlGaN-based multiple quantum wells reached 57% at 300 K.
Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

chen changqing,yang li,shengchang chen,wu tian,senlin li,wang hu,zhang jin,wu zhihao,fang yanyan,jiangnan dai

2012-01-01

Abstract:Multi-growth approaches including pulsed atomic layer epitaxy and high temperature continuous growth were used to deposit AlN layers on sapphire. The results show that the crystal quality can be significantly improved by the this technique.
High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

M. X. Wang,F. J. Xu,N. Xie,Y. H. Sun,B. Y. Liu,W. K. Ge,X. N. Kang,Z. X. Qin,X. L. Yang,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1063/1.5087547

IF: 4

2019-03-18

Applied Physics Letters

Abstract:High-temperature (HT) annealing effects on the evolution of strain in AlN films grown on sapphire have been investigated. It is found that there is a significant transition behavior from tensile to compressive strain in AlN before and after HT annealing at an optimal temperature of 1700 °C. Based on a microstructural analysis, it is clarified that the HT annealing will result in the (1) disappearance of grains that account for the tensile stress before HT annealing, (2) generation of a new interface that has little influence on the lattice constant upper/below this interface, and (3) regular 8/9 arrangement of misfit dislocation at the AlN/sapphire interface that relieves almost all stress associated with lattice mismatch. It is thus deduced that the remnant compressive strain in AlN after HT annealing mainly comes from the cooling down process due to thermal mismatch between sapphire and AlN. This understanding of the annealing effect is certainly of great significance in AlN materials science and technology.

physics, applied
High-quality AlN growth: a detailed study on ammonia flow

Gamze Yolcu,Merve Nur Koçak,Dudu Hatice Ünal,Ismail Altuntas,Sabit Horoz,Ilkay Demir

DOI: https://doi.org/10.1007/s10854-022-09556-0

2023-01-26

Abstract:High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al 2 O 3 by MOVPE (metal-organic vapor phase epitaxy) and the NH 3 flow rate has been changed to improve the morphology and quality of the films. Some characterization types of equipment such as atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), and Raman spectroscopy have been carried out to investigate the effect of different NH 3 flow rates on surface morphology, roughness, and crystal quality of AlN, respectively. Unlike in the literature, in situ optical reflectance measurements have been given depending on NH 3 flow rate and optical characterization has been performed by UV–VIS–NIR spectrophotometry. The well-defined interference patterns in the optical transmittance graph report a sharp interface between AlN and Al 2 O 3 . Also, all obtained samples have a sharp absorption edge that shows the quality of the films, but Sample B with 900 sccm NH 3 flow has the sharpest absorption edge because it has high optical quality and low defect. The RMS (root mean square), (screw-type dislocation density), and (edge-type dislocation density) values of AlN with 900 sccm NH 3 flow are 0.22 nm, 7.86 х 10 7 , and 1.68 х 10 10 cm −2 , respectively. The results obtained are comparable to the literature.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Wang Wei-Ying,Jin Peng,Liu Gui-Peng,Li Wei,Liu Bin,Liu Xing-Fang,Wang Zhan-Guo

DOI: https://doi.org/10.1088/1674-1056/23/8/087810

2014-01-01

Abstract:The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as similar to 177 nm. Annealing experiments were carried out in either N-2 or vacuum atmosphere with the annealing temperature ranging from 1200 degrees C to 1600 degrees C. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N-2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL-ON complex in the AlN material.
Characteristics of Annealing of InN Films

Zili Xie,Rong Zhang,Xiangqian Xiu,Zhaoxia Bi,Bin Liu,Lin Pu,Dunjun Chen,Ping Han,Shulin Gu,Ruoliang Jiang,Shunming Zhu,Hong Zhao,Yi Shi,Youdou Zheng

DOI: https://doi.org/10.3321/j.issn:0253-4177.2006.02.027

2006-01-01

Chinese Journal of Semiconductors

Abstract:The characteristics of annealing of InN films with NH_3 atmosphere are investigated.The XRD,SEM,and XPS are used to analyze the samples.The experiments indicate that the crystalline quality and morphology of InN do not evolve monotonously with annealing temperatures.During the annealing,In atoms resulting from the volatilization of N atoms aggregate on the surface,and thus In grains form.When the annealing temperature is higher than 425℃,the density of In grains decreases due to the desorption of In atoms.The results of XRD and SEM indicate that the sample with most dense In grains has a low crystalline quality.Thus,we consider that In grains prevent the improvement of InN quality by the thermal annealing maybe due to the separation of subjacent InN from the ammonia environment and the structural mismatch between In and InN grains.
Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Mingtao Nong,Che-Hao Liao,Xiao Tang,Haicheng Cao,Tingang Liu,Patsy A. Miranda Cortez,Dhanu Chettri,Glen Isaac Maciel García,Xiaohang Li

DOI: https://doi.org/10.1063/5.0207884

IF: 4

2024-04-22

Applied Physics Letters

Abstract:This study investigated the growth of AlN epitaxial films on 2-in. Si(111) via metal-organic chemical vapor deposition. By introducing triethylboron (TEB) during trimethylaluminum pretreatment, a nearly crack free AlN epilayer with a thickness of 500 nm was acquired. The x-ray diffraction rocking curves of AlN (002) and (102) exhibited full width at half maximum values of 0.22° and 0.36°, respectively. Atomic force microscopy image analysis showed that after the introduction of TEB, larger grains appeared on the surface of Si(111) substrate, promoting the 3D growth pattern of the subsequent AlN buffer layer. Laytec reflection curves depicted the morphological transition from 3D to 2D growth mode during AlN deposition. At the same time, the curvature value was significantly reduced by 20 km−1, and the Raman spectrum peak of E2(high) shifted from 648.7 to 652.5 cm−1, indicating that the surface tensile stress was greatly reduced, effectively suppressing the crack problem of AlN on Si(111).

physics, applied
Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

Yuri Itokazu,Shunsuke Kuwaba,Masafumi Jo,Norihiko Kamata,Hideki Hirayama

DOI: https://doi.org/10.7567/1347-4065/ab1126

IF: 1.5

2019-05-28

Japanese Journal of Applied Physics

Abstract:The reduction of dislocation density is a key to improving the performance of AlN-based devices.High-temperature annealing has attracted increasing attention as a method for fabricatinghigh-quality AlN at low cost. We study the influence of the nucleation conditions on the quality ofAlN layers with high-temperature annealing and regrowth processes. Higher crystallinity is obtainedfor samples with a lower nucleation layer growth temperature. The results can be explained in termsof a recrystallization process in which small recrystallized grains without dislocation or strainare generated in the matrix crystal and grow with fusion/annihilation of dislocations at thesurrounding grain boundaries. Additional growth of AlN on annealed AlN further improves thecrystalline quality and surface flatness. An AlGaN deep-UV light-emitting diode grown onhigh-temperature annealed AlN shows an external quantum efficiency of 1.9%.

physics, applied
Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Ren Fan,Hao Zhi-Biao,Hu Jian-Nan,Zhang Chen,Luo Yi

DOI: https://doi.org/10.1088/1674-1056/19/11/116801

2010-01-01

Chinese Physics B

Abstract:In this paper, the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes The surface profiles of nucleation layer with different thicknesses after in situ annealing are also analysed by atomic force microscope A critical nucleation thickness for realising high quality AlN films is found When the nucleation thickness is above a certain value, the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing, whereas the (002) XRD FWHM shows an opposite trend These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth
Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Li Zhang,Zenghua Wang,Hongjuan Cheng,Chenchen Fan,Yingmin Wang,Ying Zhang,Lei Jin,Zhanpin Lai

DOI: https://doi.org/10.1016/j.vacuum.2024.113286

IF: 4

2024-05-18

Vacuum

Abstract:The crystallization of aluminum nitride (AlN) hetero-epitaxial seeding on silicon carbide (SiC) by physical vapor transport (PVT), was systematically studied using XRD, UV-Vis, PL, SIMS, Raman and stress simulation. The evolution of crystal quality, transmittance, purity and residual stress of 2-inch AlN crystal in the growth process are described. The crystal quality of AlN growth layer gradually improves with the crystal thickness, as reflected in the decrease of XRD full width at half maximum (FWHM) from higher than 300 arcsec to 85 arcsec, SIMS yielded Si concentrations decreases from 10 20 cm -3 to 10 18 cm -3 , absorbance coefficient @320 nm from 56 cm -1 to 9 cm -1 , and simulated residual stress from 270 MPa to 50 MPa, indicating a comprehensively improved quality by simply increasing the crystal thickness of AlN crystal on SiC seed. Furthermore, a 2-inch crack-free AlN single crystal with high quality was successfully fabricated by inducing a layered structure.

materials science, multidisciplinary,physics, applied
High‐Temperature Annealing of AlGaN

Sylvia Hagedorn,Taimoor Khan,Carsten Netzel,Carsten Hartmann,Sebastian Walde,Markus Weyers

DOI: https://doi.org/10.1002/pssa.202000473

2020-10-07

physica status solidi (a)

Abstract:In the last few years high temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. In this study, the example of Al0.77Ga0.23N is used to investigate whether annealing can also improve the material quality of the ternary alloy. A detailed analysis of the influence of annealing temperature on structural and optical material properties is presented. It was found that with increasing annealing temperature the threading dislocation density can be lowered from an initial value of 6.0×109 cm−2 down to 2.6×109 cm−2. Ga depletion at the AlGaN surface and Ga diffusion into the AlN buffer layer is observed. After annealing the defect luminescence between 3 eV and 4 eV is increased, accompanied by an increase of the oxygen concentration by about two orders of magnitude. Furthermore, due to annealing optical absorption at 325 nm (3.8 eV) occurs, which increases with increasing annealing temperature. It is assumed that the reason for this decrease in UV transmittance is the increasing number of vacancies caused by the removal of group‐III and N atoms from the AlGaN lattice during annealing.This article is protected by copyright. All rights reserved.
Annealing Effects On The Field Emission Properties Of Aln Nanorods

Qing Zhao,Sunqi Feng,Yanwu Zhu,Xiangyu Xu,Xinzheng Zhang,Xuefeng Song,Jun Xu,Li Chen,Dapeng Yu

DOI: https://doi.org/10.1088/0957-4484/17/11/S20

IF: 3.5

2006-01-01

Nanotechnology

Abstract:The effects of thermal annealing on the field emission properties of AlN nanorods treated in different ways were investigated. A strong correlation was observed between the nitrogen vacancy concentration and the field emission properties of the samples. The sample annealed in ammonia had a higher emission current than the as-grown and vacuum-annealed samples. Raman and cathodoluminescence analyses revealed that the sample treated with ammonia had the smallest nitrogen vacancy density and the lowest work function, leading to the best field emission properties. These results indicate that post-treatment is an effective way to improve the field emission properties of AlN nanostructures.
Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Xiaochun Tao,Yongkuan Xu,Jianli Chen,Yonggui Yu,Xiaofang Qi,Wencheng Ma,Zhanggui Hu

DOI: https://doi.org/10.3390/cryst14040331

IF: 2.7

2024-03-31

Crystals

Abstract:Aluminum nitride (AlN) crystals with areas ranging from 1 mm2 to 2 mm2 were successfully grown through spontaneous nucleation at 1700 °C using a modified vapor transport method. In this approach, Cu–Al alloy served as the source of aluminum (Al), and nitrogen (N2) was employed as the nitrogen source. The morphology and crystalline quality of the AlN crystals were characterized by a stereo microscope, Raman spectrometer, photoluminescence (PL) and secondary-ion mass spectrometry (SIMS). Deposited on the graphite lid, the as-grown AlN crystals exhibited both rectangular and hexagonal shapes, identified as m-plane and c-plane AlN, respectively, based on Raman spectroscopy. The full width half maximum (FWHM) values of E2 (high) for the rectangular and hexagonal grains were measured to be 6.00 cm−1 and 6.06 cm−1, respectively, indicating high crystalline quality. However, PL and SIMS analysis indicated the presence of impurities associated with oxygen in the crystals. This paper elucidates the growth mechanism of the modified vapor transport method and highlights the role of the Cu–Al alloy in sustaining reactions at lower temperatures. The addition of copper (Cu) not only facilitates sustainable reactions, but also provides a novel perspective for the growth of AlN single crystals.

materials science, multidisciplinary,crystallography
Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures

Chunpeng Li,Xionghui Zeng,Xiaodan Wang,Xiaodong Gao,Hongmin Mao,Xiaoming Dong,Yi Zhang,Jiafan Chen,Ke Xu

DOI: https://doi.org/10.1002/pssa.202300064

2023-01-01

Abstract:The microstructure evolution of AlN implanted with Eu during thermal treatment is characterized by transmission electron microscopy (TEM), high-resolution X-ray diffraction, and atomic force microscopy. Three regions with different contrast can be observed in the TEM for the implanted samples. The region A is 30 nm below the surface, the region B is about 30-100 nm below the surface and is the worst damaged area, and the region C is the area below the region B. There is a relatively large stress in the region B due to the large radius difference between Eu and Al ions. After annealing at 750 & DEG;C, the stress in region B is only partially released outward, resulting in the increase of lattice defects in regions A and C. Both A and C regions show the same contrast in the weak-beam bright-field image. After annealing at 1040 & DEG;C, there are almost no shadow regions, which indicates that the stress is completely released and the lattice damage is removed. Meanwhile, the results of cathodoluminescence (CL) show that the luminescence of Eu3+ is improved along with the stress releasing and damage removal.
The Sapphire Substrate Pretreatment Effects on High-Temperature Annealed AlN Templates in Deep Ultraviolet Light Emitting Diodes

M. X. Wang,F. J. Xu,J. M. Wang,N. Xie,Y. H. Sun,B. Y. Liu,J. Lang,N. Zhang,W. K. Ge,X. N. Kang,Z. X. Qin,X. L. Yang,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1039/c9ce00702d

IF: 3.756

2019-01-01

CrystEngComm

Abstract:Evolution of crystalline quality of AlN via high-temperature (HT) annealing induced by different sapphire pretreatments is investigated.
High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Shengyuan Dong,Yanhui Xing,Xuguang Deng,Chunhong Zeng,Chengcheng Zhi,Jiaming Weng,Wenbo Tang,Binghui Wang,Jiahao Li,Tong Liu,Jun Han,Baoshun Zhang,Zhongming Zeng

DOI: https://doi.org/10.1021/acs.cgd.3c00146

IF: 4.01

2023-05-31

Crystal Growth & Design

Abstract:The growth of high-quality AlN films has always been the focus of research. Combined with NH3 in situ pretreatment before growth, with optimized growth conditions, we demonstrated a periodic growth method, which alternates between three-dimensional (3D) growth mode and two-dimensional (2D) growth mode, to grow a thick crack-free AlN film with good crystal quality on the on-axis 4H-SiC substrate by metal–organic chemical vapor deposition (MOCVD). X-ray rocking curves (XRCs) indicated that full width at half-maximum (FWHM) of the (0002) and (10–12) reflections were 241.3″ and 474.4″, respectively. The film thickness was over 1.4 μm. Lattice constant and residual stress results showed residual compressive stress in the sample. The periodic two-step growth and substrate pretreatment both play an important role in controlling the residual stress of films to avoid cracking. This work can serve as an important reference for growing high-quality crack-free AlN on SiC.

chemistry, multidisciplinary,materials science,crystallography
Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes

Hongliang Chang,Bingyao Liu,Dongdong Liang,Yaqi Gao,Jianchang Yan,Zhetong Liu,Zhiqiang Liu,Junxi Wang,Jinmin Li,Peng Gao,Tongbo Wei

DOI: https://doi.org/10.1063/5.0028094

IF: 4

2020-11-02

Applied Physics Letters

Abstract:We achieve stress-free AlN films with low dislocation density by employing Graphene (Gr)-induced crystal-healing via high-temperature annealing (HTA). The N2 plasma-treated Gr effectively facilitates the formation of high-density and small-size AlN grains during the initial quasi-van der Waals epitaxial growth. Thus, it is easier to rotate the inhomogeneous crystal orientation for subsequent AlN epilayers during the HTA process, greatly improving the recrystallization efficiency of AlN. Due to the improved AlN quality, the 283-nm deep ultraviolet light-emitting diode (DUV-LED) on the HT-annealed AlN with Gr shows a significant increase in light output power of 2.3 times at an injection current of 20 mA compared to its counterpart on bare sapphire. This research broadens the applications of Gr in assisting group-III nitride epitaxy and provides a useful strategy for the manufacture of high-quality AlN and high-performance DUV-LEDs.

physics, applied
Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

Xuejun Yan,Maosong Sun,Jianli Ji,Zhuokun He,Jicai Zhang,Wenhong Sun

DOI: https://doi.org/10.3390/ma17020327

IF: 3.4

2024-01-10

Materials

Abstract:AlN epilayers were grown on magnetron-sputtered (MS) (11–22) AlN buffers on m-plane sapphire substrates at 1450 °C via hydride vapour phase epitaxy (HVPE). The MS buffers were annealed at high temperatures of 1400–1600 °C. All the samples were characterised using X-ray diffraction, atomic force microscopy, scanning electron microscope and Raman spectrometry. The crystal quality of epilayers regrown by HVPE was improved significantly compared to that of the MS counterpart. With an increasing annealing temperature, the crystal quality of both MS buffers and AlN epilayers measured along [11–23] and [1–100] improved first and then decreased, maybe due to the decomposition of MS buffers, while the corresponding anisotropy along the two directions decreased first and then increased. The optimum quality of the AlN epilayer was obtained at the annealing temperature of around 1500 °C. In addition, it was found that the anisotropy for the epilayers decreased significantly compared to that of annealed MS buffers when the annealing temperature was below 1500 °C.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Hao Teng,Shengming Zhou,Hui Lin,Taohua Huang,Ping Han,Rong Zhang

DOI: https://doi.org/10.1016/j.jallcom.2008.01.104

IF: 6.2

2009-01-01

Journal of Alloys and Compounds

Abstract:Aluminum nitride (AlN) films were prepared on γ-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (Ts) and nitrogen (N2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300°C. A smoother surface and a crystalline quality decrease with increasing N2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed.
Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Liqiong Deng,Fanping Meng,Ji Li,Fang Ye,Wei Guo,Jichun Ye

DOI: https://doi.org/10.1016/j.jallcom.2024.174997

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:Doping scandium in aluminum nitride (AlN) can effectively enhance the piezoelectric properties of the material, herein making ScAlN a research hotspot for the application of high-frequency and wide-bandwidth RF devices. However, there has been limited investigations into the evolution of crystal structure and composition stability under thermal annealing, especially at high temperatures. In this work, the crystal quality, surface morphology, phase and elemental distribution of sputter-deposited Sc x Al 1_ x N thin films with various Sc contents were comprehensively investigated before and after high-temperature thermal annealing. It is found that the fullwidth-half-maximum values of the (002) diffraction peaks of Sc x Al 1_x N thin films increase with higher Sc contents, while appropriate annealing condition can enhance crystal quality. It is also revealed that Sc segregation leads to the formation of cubic-phase ScN grains, and Sc atoms diffuse towards the sapphire substrate and surface, forming a Sc 2 O 3 layer on two sides of the ScAlN core layer. These findings provide important insights into the preparation of wurtzite ScAlN films under thermal annealing and offer valuable references for the development of novel ScAlN-based devices.

Crystal quality evolution of AlN films <i>via</i> high-temperature annealing under ambient N<sub>2</sub> conditions

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

High-quality AlN growth: a detailed study on ammonia flow

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Characteristics of Annealing of InN Films

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

High‐Temperature Annealing of AlGaN

Annealing Effects On The Field Emission Properties Of Aln Nanorods

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures

The Sapphire Substrate Pretreatment Effects on High-Temperature Annealed AlN Templates in Deep Ultraviolet Light Emitting Diodes

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes

Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films