Abstract:With the integration of 5G in day-to-day devices and the foreseeable 6G revolution, demand for advanced radio frequency (RF) microelectromechanical systems (MEMS) is growing. Aluminum scandium nitride (AlScN) has emerged as the material of choice for many of those applications due to its superior piezoelectric and electromechanical properties compared to aluminum nitride (AlN). However, synthesizing high-quality, textured AlScN thin films is challenging. Alloying of Sc in AlN induces structural frustration leading to strain, defects, disoriented grains, and disrupted crystal symmetry during growth. Higher deposition temperatures, while improving crystalline quality, risk undesirable phase precipitation and limit industrial sustainability. In addition, future MEMS technologies also demand conformal and textured coatings over diverse topographies. Addressing these challenges collectively requires new and innovative synthesis approaches. In this study, we investigate the feasibility of ionized physical vapor deposition to deposit highly oriented AlScN films with minimal defects at lower temperatures. To this end, we employ combinations of different deposition approaches, such as metal-ion synchronized (MIS) high-power impulse magnetron sputtering (HiPIMS). Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we selectively bombard the growing film with Al and/or Sc ions to enhance the adatom mobility at low temperatures while simultaneously providing the ability to tune stress and coat complex structures conformally. The nonequilibrium solubility of Sc in wurtzite AlN under different conditions is investigated using a combinatorial deposition approach. Promising candidates with ∼20% Sc composition are isolated and characterized for crystallinity and residual stress. Disoriented grains, a significant issue in growing AlScN films, are observed through atomic force microscopy and found to be completely removed by substrate rotation and application of substrate biasing. The measured piezoelectric response of the films with approximately 20% Sc concentration ranges from 6.3 to 8.8 pm/V , in line with density functional theory predictions and experimentally reported values for films deposited in a production tool with coplanar geometry. At the same time, MIS-HiPIMS-deposited films offer unique properties and flexibility to tune their stress state and structural properties, thus presenting exciting opportunities for the fabrication of advanced RF filters and next-generation MEMS devices. https://doi.org/10.1103/PhysRevMaterials.8.095001 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Investigation of thermal annealing on the characteristics of Sc Al1−N thin films

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

Influence of Sputtering Power on Crystal Quality and Electrical Properties of Sc-doped AlN Film Prepared by DC Magnetron Sputtering

Effects of Sputtering Atmosphere on the Properties of C-Plane ScAlN Thin Films Prepared on Sapphire Substrate

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate

Low temperature sputtering deposition of Al1−xScxN thin films: Physical, chemical, and piezoelectric properties evolution by tuning the nitrogen flux in (Ar + N2) reactive atmosphere

Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Deposition of ScAIN Thin Film Using RF-sputtering Method

The Preparation of Scaln(002) Alloy Thin Films Deposited on Si(100) Substrates by Dc Reactive Magnetron Sputtering

Crystal structure deformation and phase transition of AlScN thin films in whole Sc concentration range

High Quality Co-Sputtering AlScN Thin Films for Piezoelectric Lamb-Wave Resonators

Influence of underlayer roughness on the properties of Sc0.4Al0.6N thin films prepared via sputter deposition

High-Quality Single Crystalline Sc0.37Al0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy

Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films

Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing

Deposition of highly crystalline AlScN thin films using synchronized high-power impulse magnetron sputtering: From combinatorial screening to piezoelectric devices

Aluminum Scandium Nitride as a Functional Material at 1000°C

Research on the Phase and Optical Properties of Nc-Si Films Prepared by Low Temperature Aluminum Induced Crystallization

Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications

Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes