Abstract:Sc0.18Al0.82N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 °C is demonstrated to have improved crystalline order [250 arc sec for the (0002) reflection and 469 arc sec for the (101 ̄5)] compared to a previous state-of-the-art sample grown at a more conventional temperature of 650 °C. While both samples show a columnar structure, the higher substrate temperature sample has a good symmetric rocking curve (RC) of 229 arc sec, but unlike the lower temperature sample, the RC of the (101 ̄5) asymmetric reflection could not be measured, indicating a more columnar structure common among ScAlN films. Local lattice constant maps (LLCMs) from 4D-STEM depict abrupt strain relaxation within ∼2 nm from the ScAlN/GaN interface for the sample grown at Tsub = 400 °C. Since these LLCMs suggest a lattice mismatch in the a-lattice constant, and since the films show a sudden roughening, the composition for lattice match to GaN may be less than the accepted 18%–20% Sc, consistent with the average GaN lattice match from lattice constant values reported in the literature of 12%. Compared to traditional III-Nitrides, ScAlN films have substantially more screw and mixed-type threading dislocations, suggesting substantial shear forces that result in significant twist and distortion leading to orthorhombic diffraction patterns as viewed from plan-view TEM in the Tsub = 650 °C sample. These results offer the possibility of ScAlN integration into low-thermal-budget processes including CMOS but further indicate that structural understanding of ScAlN remains lacking.

What problem does this paper attempt to address?

This paper aims to solve the problem of improving the crystal quality of ScAlN/GaN heterostructures when grown under low - temperature metal - rich surface conditions. Specifically, through the metal - modulated epitaxy (MME) technique, the researchers successfully prepared ScAlN/GaN heterostructures with a higher degree of crystal order at a relatively low substrate temperature (400°C). Compared with the traditional high - temperature growth method, this low - temperature growth method can significantly improve the crystal quality of the material, reduce the defect density, and improve the interface characteristics of the material. The paper also explores the influence of different growth conditions on the lattice constant, strain distribution, and defect types of ScAlN/GaN heterostructures, providing important experimental evidence and theoretical guidance for further optimizing the growth process of ScAlN materials. The key points of the paper include: 1. **Improvement of crystal quality**: By growing ScAlN thin films using the MME technique at a low temperature of 400°C, the researchers achieved a higher degree of crystal order than the traditional high - temperature growth method. Specifically, the width of the rocking curve (RC) in X - ray diffraction (XRD) is significantly reduced. In particular, the RC width for the (10/C2215) asymmetric reflection is reduced from unmeasurable to 469 arc seconds. 2. **Change in lattice constant**: The c - axis lattice constant of the ScAlN thin film grown at low temperature is 5.027 Å, which is higher than 4.965 Å for high - temperature growth, indicating that low - temperature growth helps to reduce the inclusion of cubic - phase ScN, thereby increasing the purity of hexagonal - phase ScAlN. 3. **Reduction in defect density**: The densities of screw dislocations and mixed - type dislocations in the ScAlN thin film grown at low temperature are significantly reduced, approximately \(4\times10^{10}\text{cm}^{-2}\), far lower than the dislocation densities of other III - group nitride thin films. 4. **Analysis of strain distribution**: The local lattice constant map (LLCM) obtained by 4D - STEM technology shows that in the sample grown at low temperature, a sharp strain release occurs within a range of about 2 nm near the ScAlN/GaN interface, while in the sample grown at high temperature, a moderate strain release exists throughout the ScAlN thin film. These results not only demonstrate the potential of the low - temperature MME technique in improving the crystal quality of ScAlN/GaN heterostructures but also provide an important reference for further research and application of the integration of this material in low - thermal - budget processes such as CMOS.

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN

Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Understanding Interfaces in AlScN/GaN Heterostructures

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Growth and characterization of AlInN/GaN superlattices