Abstract:Sc0.18Al0.82N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 °C is demonstrated to have improved crystalline order [250 arc sec for the (0002) reflection and 469 arc sec for the (101 ̄5)] compared to a previous state-of-the-art sample grown at a more conventional temperature of 650 °C. While both samples show a columnar structure, the higher substrate temperature sample has a good symmetric rocking curve (RC) of 229 arc sec, but unlike the lower temperature sample, the RC of the (101 ̄5) asymmetric reflection could not be measured, indicating a more columnar structure common among ScAlN films. Local lattice constant maps (LLCMs) from 4D-STEM depict abrupt strain relaxation within ∼2 nm from the ScAlN/GaN interface for the sample grown at Tsub = 400 °C. Since these LLCMs suggest a lattice mismatch in the a-lattice constant, and since the films show a sudden roughening, the composition for lattice match to GaN may be less than the accepted 18%–20% Sc, consistent with the average GaN lattice match from lattice constant values reported in the literature of 12%. Compared to traditional III-Nitrides, ScAlN films have substantially more screw and mixed-type threading dislocations, suggesting substantial shear forces that result in significant twist and distortion leading to orthorhombic diffraction patterns as viewed from plan-view TEM in the Tsub = 650 °C sample. These results offer the possibility of ScAlN integration into low-thermal-budget processes including CMOS but further indicate that structural understanding of ScAlN remains lacking.

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN

High‐Temperature Annealing of AlGaN

Growth of Wurtzite GaN Films on Α-Al2o3 Substrates Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature