Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

Domain control and periodic poling of epitaxial ScAlN

Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N

High quality epitaxial piezoelectric and ferroelectric wurtzite Al$_{1-x}$Sc$_x$N thin films

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al1- xScxN Thin Films

Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

High-Quality Single Crystalline Sc0.37Al0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy

2-inch semi-polar (11̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy

Ferroelectric YAlN grown by molecular beam epitaxy

Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures