Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Behaviours of the lattice-polarity inversion in the AlN growth on the c-Al2O3(0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Step-flow Growth of Al Droplet Free AlN Epilayers Grown by Plasma Assisted Molecular Beam Epitaxy

A common Dubin-Johnson syndrome mutation impairs protein maturation and transport activity of MRP2 (ABCC2).

Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Pit density reduction for AlN epilayers grown by molecular beam epitaxy using Al modulation method

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Monolayer-scale AlN/GaN Digital Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy

Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing