Abstract:Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Excitonic Emission Dynamics in Homoepitaxial AlN Films Studied Using Polarized and Spatio-Time-resolved Cathodoluminescence Measurements

Sharp Bound and Free Exciton Lines from Homoepitaxial AlN

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Vacuum Rabi Splitting of Exciton–Polariton Emission in an AlN Film

Deep‐ultraviolet luminescence properties of AlN

Vacancy Compensation and Related Donor-Acceptor Pair Recombination in Bulk AlN

Compositional Modulation and Optical Emission in AlGaN Epitaxial Films

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Optical Identification of Silicon As a Shallow Donor in MOVPE Grown Homoepitaxial AlN

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Direct Determination of the Silicon Donor Ionization Energy in Homoepitaxial Aln from Photoluminescence Two-Electron Transitions

Stable electroluminescence in ambipolar dopant-free lateral p-n junctions

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys