Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
Qin Zhou,Zhaofu Zhang,Hui Li,Sergii Golovynskyi,Xi Tang,Honglei Wu,Jiannong Wang,Baikui Li
DOI: https://doi.org/10.1063/5.0012685
IF: 6.6351
2020-08-01
APL Materials
Abstract:The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap-excited photoluminescence (PL) spectroscopy and first-principles calculations. Oxygen (O) is the only impurity in the AlN-on-W crystal grown by PVT. By analyzing the excitation-power-, excitation-photon-energy-, and temperature-dependence of the PL spectra, the emission peaks of defect complexes involving aluminum vacancy (V<sub>Al</sub>) and substitutional oxygen (O<sub>N</sub>) with different spatial and atomic configurations, i.e., V<sub>Al</sub>–O<sub>N</sub> and V<sub>Al</sub>–2O<sub>N</sub> with O<sub>N</sub> featuring axial or basal configurations, are identified. It is revealed that two different charging states coexist <i>in thermal equilibrium</i> for each configuration of V<sub>Al</sub>–O<sub>N</sub> complexes. The optical transitions between the conduction band and (V<sub>Al</sub>–O<sub>N</sub>)<sup>2−</sup> and/or (V<sub>Al</sub>–2O<sub>N</sub>)<sup>1−</sup> contribute the UV emissions and those between the valence band and (V<sub>Al</sub>–O<sub>N</sub>)<sup>1−</sup> or (V<sub>Al</sub>–2O<sub>N</sub>)<sup>0</sup> contribute the red emissions.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology