Abstract:Due to structural imperfection and indium content fluctuation, carriers' localization in an InGaN-based active layer can produce efficient luminescence and unusual thermodynamic behaviors. Spectral features associated with localization, such as the "S-shaped" shift of peak energy in temperature-dependent photoluminescence (PL) and the nonexponential decay in time-resolved photoluminescence (TRPL), have not yet formed a comprehensive physical interpretation. In this work, the thermal evolution of carriers' decay process is examined by spectroscopic approaches in high-efficiency InGaN/GaN multiple quantum well (MQW) samples. Based on the localized-state ensemble model, the peak shift in temperature-dependent PL is excellently fitted by the "red" and "blue" localization centers, which perfectly match with the fast and slow processes resolved from TRPL using biexponential model, All variations in emission peak, line shape, filling position, and lifetime with temperature are elucidated by carriers redistributing between two kinds of localization centers according to the density of states. Meanwhile, the impact of substrate and underlying layers in MQW samples has also been compared. Through such systematic analysis, the dynamics of carriers in MQWs have been quantitatively discussed, and a comprehensive understanding on the localization-induced luminescence mechanism is achieved.

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

Localized Exciton Dynamics in AlInGaN Alloy

Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array

Thermodynamics of Carrier Distribution Within Localized Electronic States with a Broad Gaussian Energy Distribution and Its Effect on Luminescence Behavior of Localized States

Spontaneous Emission Mechanisms of Ga in As N ∕ Ga As Quantum Dot Systems

Photoluminescence and Absorption in InGaN Films with InN Segregation

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Effects of alloy potential fluctuations in InGaN epitaxial films

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

The temperature dependence of optical properties of InGaN alloys

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys

Optical Study of Localized and Delocalized States in Gaasn/Gaas

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density