Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (aln)m/(gan)n(m>n) Superlattice Substitution for Al-rich AlGaN Disorder Alloy: Ultra-Thin GaN Layer Modulation

Optical Investigation Of Strong Exciton Localization In High Al Composition Alxga1-Xn Alloys

Localized Exciton Dynamics in AlInGaN Alloy

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Probing alloy formation using different excitonic species: The particular case of InGaN

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

Electronic properties of graded Ga 1‐x Al x N superlattice nanowires photocathode: First‐principles

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Microscopic origin of light emission in Al_yGa_{1-y}N/GaN superlattice: Band profile and active site

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

First-principles Investigation on Optical Properties of GaN and InGaN Alloys