Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Optical Investigation Of Strong Exciton Localization In High Al Composition Alxga1-Xn Alloys

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Exciton localization and dynamics in GaNAsP nanowires

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Lattice Dynamics of Wurtzite Semiconductors Gan and Aln

Localized Exciton Dynamics in AlInGaN Alloy

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

Probing alloy formation using different excitonic species: The particular case of InGaN

Calculation of the Electron and Hole Impact Ionization Rate for Wurtzite AlN and GaN

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Valence Band Density of States of Zinc-Blende and Wurtzite InN from X-Ray Photoemission Spectroscopy and First-Principles Calculations

Optical Study of Electronic States in Gaasn