Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Tie-cheng Zhou,Jun-jie Shi,Min Zhang,Mao Yang,Hong-xia Zhong,Xin-he Jiang,Pu Huang

DOI: https://doi.org/10.1021/jp405963a

2013-01-01

Abstract:InGaN nanowires (NWs) show exceptional optical properties and have huge potential in applications such as light-emitting diodes, laser diodes, and solar cells. Although lots of work has focused on improving their optical performance, little is known about the influence of the In distribution and surface states on the microscopic light emission mechanism. In order to give an atomic-level understanding, we investigate the electronic structures of the wurtzite Ga-rich InGaN NWs with different In distributions using first-principles calculations, in which both the unsaturated and saturated NWs are considered. We find that In atoms are apt to distribute on the surface of the NWs and that the short surface In-N chains can be easily formed. For the unsaturated NWs, several new bands are induced by the surface states, which can be modified by the surface In microstructures. The randomly formed surface In-N chains can highly localize the electrons/holes at the band edges and dominate the interband optical transition. For the saturated NWs, the band edges are determined by the inner N and Ga atoms. Our work is useful to improved the performance of the InGaN NW-based optoelectronic devices.