Abstract:The morphology of Ag nanoparticles influences the photoluminescence (PL) efficiency of InGaN/GaN multiple quantum wells (MQWs) dramatically.In this paper,the ion beam deposition (IBD) technique was employed to deposit Ag on the surface of InGaN/GaN MQWs,and then Ag nanoparticles were fabricated by thermal annealing process.Ag nanoparticles with different morphology were obtained by adjusting the deposition time.For each sample,the morphology of Ag nanoparticles was characterized by AFM.In addition,the absorbance spectra,room and variable temperature PL spectra and time resolved PL (TRPL) spectra were carried out to determine the optical properties of the samples.The results show that the diameters of Ag nanoparticles increase with the increasing of deposition time,and the aspect ratio increases first and then decreases.Moreover,a red shift of the absorption peak of Ag nanoparticles is observed.Compared with the sample without Ag nanoparticles,the room temperature PL integrated intensity of the sample with Ag deposition time of 15 s is suppressed 6.74 times.For the samples with Ag deposition time of 25 s and 35 s,the PL integrated intensities are enhanced 1.55 and 1.72 times,respectively.Meanwhile,a red shift occurs in the peak position.Whereas,there is no obvious change in PL integrated intensity for the sample with Ag deposition time of 45 s.This phenomenon can be attributed to the difference morphology of Ag nanoparticles on each sample.The morphology of Ag nanoparticles influences the coupling strength between the localized surface plasmons (LSPs) in Ag nanopaticles and the excitons in MQWs.The light scatting ability of Ag nanoparticles is also influenced by its morphology.The measurement results of TRPL and variable temperature PL demonstrate that the change of room temperature PL integrated intensity is induced by the coupling between LSPs and the excitons in MQWs.Finally,it is found that Ag nanoparticles with bigger aspect ratio and absorption spectrum overlap PL spectrum of MQWs more can better enhance the PL intensity of InGaN/GaN MQWs.

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