Abstract:Although surface plasmon (SP) coupling has been widely used for enhancing the emission efficiency of an InGaN/GaN quantum well (QW) structure, the interplay of the carrier transport behavior in the QW with SP coupling, which is a crucial mechanism controlling the SP-coupling induced QW emission enhancement, is still an issue not well explored yet. To understand the effects of SP coupling on the radiative and non-radiative recombination behaviors of carriers in a QW structure, the temperature-dependent time-resolved photoluminescence spectroscopies of two QW samples of different indium contents with surface Ag nanoparticles are studied. A two-single-exponential model is used for calibrating their radiative and non-radiative decay times. The SP coupling process, which transfers carrier energy from a QW into the SP resonance mode for effective radiation and increases the effective radiative recombination rate, produces energy-dependent carrier depletion and, hence, disturbs the quasi-equilibrium condition of carrier distribution. In this situation, a strong carrier transport process occurs targeting a new quasi-equilibrium condition that enhances non-radiative recombination and, hence, reduces the benefit of using the SP coupling technique. To alleviate this problem of SP-coupling induced energy loss, a weak energy-dependent or broad-spectrum SP coupling process is recommended.

Influence of localized surface plasmons on carrier dynamics in InGaN/GaN quantum wells covered with Ag nanoparticles for enhanced photoluminescence

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Effect of the Band Structure of InGaN/GaN Quantum Well on the Surface Plasmon Enhanced Light-Emitting Diodes

Investigation Of Surface-Plasmon Coupled Red Light Emitting Ingan/Gan Multi-Quantum Well With Ag Nanostructures Coated On Gan Surface

Enhanced Luminescence Performance of Quantum Wells by Coupling Piezo-Phototronic with Plasmonic Effects

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Photoluminescence Tailoring of InGaN/GaN Quantum Wells with Silver Nanoparticle‐assembled Films

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Resonant Absorption and Scattering Suppression of Localized Surface Plasmons in Ag Particles on Green LED.

Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots

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Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

Quantum Yield of Single Surface Plasmons Generated by a Quantum Dot Coupled with a Silver Nanowire

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Silver Nanoshell Plasmonically Controlled Emission of Semiconductor Quantum Dots in the Strong Coupling Regime

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Photoluminescence Enhancement in Wide Spectral Range Excitation in CsPbBr3 Nanocrystal/ag Nanostructure Via Surface Plasmon Coupling

Enhancement of Light Emission from Nanostructured In(2)O(3) Via Surface Plasmons.

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances