Abstract:We explore a strongly interacting QDs/Ag plasmonic coupling structure that enables multiple approaches to manipulate light emission from QDs. Group II-VI semiconductor QDs with unique surface states (SSs) impressively modify the plasmonic character of the contiguous Ag nanostructures whereby the localized plasmons (LPs) in the Ag nanostructures can effectively extract the non-radiative SSs of the QDs to radiatively emit via SS-LP resonance. The SS-LP coupling is demonstrated to be readily tunable through surface-state engineering both during QD synthesis and in the post-synthesis stage. The combination of surface-state engineering and band-tailoring engineering allows us to precisely control the luminescence color of the QDs and enables the realization of white-light emission with single-size QDs. Being a versatile metal, the Ag in our optical device functions in multiple ways: as a support for the LPs, for optical reflection, and for electrical conduction. Two application examples of the QDs/Ag plasmon coupler for optical devices are given, an Ag microcavity + plasmon-coupling structure and a new QD light-emitting diode. The new QDs/Ag plasmon coupler opens exciting possibilities in developing novel light sources and biomarker detectors.

Photoluminescence Tailoring of InGaN/GaN Quantum Wells with Silver Nanoparticle‐assembled Films

Enhancing Light Output of GaN-based Light-Emitting Diodes with Nanoparticle-Assembled On-Top Layers

Enhanced Internal Quantum Efficiency of an InGaN/GaN Quantum Well As a Function of Silver Thickness Due to Surface Plasmon Coupling

Influence of localized surface plasmons on carrier dynamics in InGaN/GaN quantum wells covered with Ag nanoparticles for enhanced photoluminescence

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Enhanced Luminescence Performance of Quantum Wells by Coupling Piezo-Phototronic with Plasmonic Effects

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Effect of the Band Structure of InGaN/GaN Quantum Well on the Surface Plasmon Enhanced Light-Emitting Diodes

Designable luminescence with quantum dot-silver plasmon coupler.

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Silver Nanocrystal Superlattices: Self-assembly and Optical Emission

Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots

Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots

Investigation Of Surface-Plasmon Coupled Red Light Emitting Ingan/Gan Multi-Quantum Well With Ag Nanostructures Coated On Gan Surface

Nonradiative Energy Transfer Between Colloidal Quantum Dot-Phosphors and Nanopillar Nitride Leds

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells