Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Enhancing Light Output of GaN-based Light-Emitting Diodes with Nanoparticle-Assembled On-Top Layers

High-output power GaN-LED based on surface plasmon enhancement

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Photoluminescence Tailoring of InGaN/GaN Quantum Wells with Silver Nanoparticle‐assembled Films

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles

Localized Surface Plasmon Enhanced Luminescence of GaN-Based Light-Emitting Diode

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Combining Surface Plasmonic and Light Extraction Enhancement on InGaN Quantum-Well Light-Emitters.

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Light Extraction Enhancement of GaN LEDs by Hybrid ZnO Micro-Cylinders and Nanorods Array

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Efficiency Improvement of GaN-based Micro-Light-emitting Diodes Embedded with Ag NPs into a Periodic Arrangement of Nano-Hole Channel Structure by Ultra Close Range Localized Surface Plasmon Coupling

Surface Plasmon Enhanced Green Light Emitting Diodes with Silver Nanorod Arrays Embedded in P-Gan

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Localized Surface Plasmon Enhanced InGaN-based Light-Emitting Diodes with Polygonal Au/Al Nanoparticles

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Silver Nanoparticles-induced Enhancement of Light Extraction in Two-dimensional Light-emitting Diodes

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal