Abstract:Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58 degrees with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4 degrees. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9 degrees. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9 degrees improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

High-output power GaN-LED based on surface plasmon enhancement

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Light Extraction Improvement of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings

Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating.

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

GaN-based LEDs with a High Light Extraction Composite Surface Structure Fabricated by a Modified YAG Laser Lift-off Technology and the Patterned Sapphire Substrates

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Surface-plasmon-enhanced GaN-LED Based on the Quasi-Symmetrical Planar Waveguide Structure

Top Transmission Grating Gan Led Simulations for Light Extraction Improvement

Study of Grating Layer Location of a GaN Nano-Grated LED for Improvement of Transmission Efficiency

High-Brightness Polarized Green Ingan/Gan Light-Emitting Diode Structure with Al-Coated P-Gan Grating

Simulation of Nanoscale ITO Top Grating of GaN LED