Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating.

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Surface-Plasmon-Enhanced Gan-Led Based on the Multilayered Rectangular Nano-Grating (vol 322, Pg 66, 2014)

Surface-plasmon-enhanced GaN-LED Based on the Quasi-Symmetrical Planar Waveguide Structure

High-output power GaN-LED based on surface plasmon enhancement

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Whole Article Corrigendum: “Surface-Plasmon-enhanced GaN-LED Based on the Multilayered Rectangular Nano-Grating” [optics Communications 322 (2014) 66-72]

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Gate tunable surface plasmon resonance enhanced graphene/Ag nanoparticles-polymethyl methacrylate/graphene/p-GaN heterostructure light-emitting diodes.

Transmission Efficiency Study of Grating Layer Location of a GaN Nano-Grated Structure

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Study of Grating Layer Location of a GaN Nano-Grated LED for Improvement of Transmission Efficiency

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis

Localized Surface Plasmon Enhanced InGaN-based Light-Emitting Diodes with Polygonal Au/Al Nanoparticles

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Optimization of the Planar Microcavity Structure in Bottom-Emitting Gallium Nitride Light-Emitting Diode

GaN-based LEDs with a High Light Extraction Composite Surface Structure Fabricated by a Modified YAG Laser Lift-off Technology and the Patterned Sapphire Substrates