Abstract:This study analyzes optical confinement factor and light emitting mode order for three different GaN LEDs: a conventional LED, thin Film LED, and thin Film LED with a photonic crystal (PhC) grating. For the first structure, we increase the thickness of AlxGa1-xN from 0 to 600nm, alter the x composition in AlxGa1-xN from 0.05 to 0.2 in steps of 0.05, and adjust the p-GaN and n-GaN thicknesses each from 0 to 200nm. For the second structure, we alter the n-GaN substrate thickness from 300-1000nm in steps of 100nm and 1000-4000nm in steps of 1000nm. These simulations show that increasing the substrate thickness causes the light emitting mode order to increase. The higher the mode, the more current is needed to make the device emit light. Higher current leads to shorter device lifetime. The last structure contains a photonic crystal grating with a period T = 100nm, 230nm, 460nm, 690nm, 920nm, 1500nm, 2000nm, 3000nm and 50% duty cycle. For each grating period, we display the effects on optical confinement factor and optical field intensity. The results show that changing the grating period does not affect the mode order, but does affect the optical field intensity. A larger grating period corresponds to lower optical field intensity. Maximizing optical field intensity increases the brightness of the device. The simulation method above can be used to improve the efficiency, brightness, and lifetime of GaN LEDs by reducing the effects of transverse mode coupling and maximizing the optical field intensity.

Transmission Efficiency Study of Grating Layer Location of a GaN Nano-Grated Structure

Study of Grating Layer Location of a GaN Nano-Grated LED for Improvement of Transmission Efficiency

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Study of Top Ito Nano-Gratings on Gan Leds

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

Top Transmission Grating Gan Led Simulations for Light Extraction Improvement

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis

Study Of Nano-Scale Ito Top Grating Of Gan Led

Simulation of Nanoscale ITO Top Grating of GaN LED

High-output power GaN-LED based on surface plasmon enhancement

Study of GaN LED ITO Nano-Gratings With Standing Wave Analysis

Optical Mode Pattern Study of GaN LEDs with and Without Top Nano-Gratings

Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating.

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Light Extraction Improvement of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings

Surface-Plasmon-Enhanced Gan-Led Based on the Multilayered Rectangular Nano-Grating (vol 322, Pg 66, 2014)

Optimization of Top Polymer Gratings to Improve Gan Leds Light Transmission

Whole Article Corrigendum: “Surface-Plasmon-enhanced GaN-LED Based on the Multilayered Rectangular Nano-Grating” [optics Communications 322 (2014) 66-72]