Abstract:Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58 degrees with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4 degrees. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9 degrees. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9 degrees improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Simulation of Nanoscale ITO Top Grating of GaN LED

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Study of Top Ito Nano-Gratings on Gan Leds

High-output power GaN-LED based on surface plasmon enhancement

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Light Extraction Improvement of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis

Study of Grating Layer Location of a GaN Nano-Grated LED for Improvement of Transmission Efficiency

The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency

Study of GaN LED ITO Nano-Gratings With Standing Wave Analysis

Study Of Nano-Scale Ito Top Grating Of Gan Led

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating.

Transmission Efficiency Study of Grating Layer Location of a GaN Nano-Grated Structure

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Light Extraction Enhancement of GaN LEDs by Hybrid ZnO Micro-Cylinders and Nanorods Array

Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint