Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Light Extraction Enhancement of GaN LEDs by Hybrid ZnO Micro-Cylinders and Nanorods Array

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Light Extraction Efficiency Enhancement of GaN-based Light Emitting Diodes by a ZnO Current Spreading Layer

High-output power GaN-LED based on surface plasmon enhancement

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Dual enhancement of light extraction efficiency of flip-chip light-emitting diodes with multiple beveled SiC surface and porous ZnO nanoparticle layer coating

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Enhancing Light Output of GaN-based Light-Emitting Diodes with Nanoparticle-Assembled On-Top Layers

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off