Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

High-output power GaN-LED based on surface plasmon enhancement

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Light Extraction Improvement of InGaN Light-Emitting Diodes with Large-Area Highly Ordered ITO Nanobowls Photonic Crystal Via Self-Assembled Nanosphere Lithography

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Light Extraction Enhancement of GaN LEDs by Hybrid ZnO Micro-Cylinders and Nanorods Array

Nonperiodic Binary Optical Structures for Enhancing Light Extraction of Emitters

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Light Extraction Efficiency Enhancement of GaN-based Light Emitting Diodes by a ZnO Current Spreading Layer

Dual enhancement of light extraction efficiency of flip-chip light-emitting diodes with multiple beveled SiC surface and porous ZnO nanoparticle layer coating

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Surface-plasmon-enhanced GaN-LED Based on the Quasi-Symmetrical Planar Waveguide Structure

Study on Light Extraction Efficiency of GaN-based Light-emitting Diode Chips

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.