Abstract:Light emitting diodes (LEDs) based on indium gallium nitride (InGaN) have been used widely in lighting applications and have shown great potential with high wall-plug efficiency and low manufacturing cost. However, one of the roadblocks in achieving higher light-extraction efficiency is total internal reflection, which prevents a majority of the photons from being extracted from the LEDs.The objective of this paper is to investigate measures for improving LED chip efficiency. Here, a high efficiency LED structure has been theoretically demonstrated using an infiltrated opal layer. A layer of indium-tin oxide (ITO) infiltrated opals was deposited on the surface of the LED chips as the light extraction layer in order to enhance the light extraction efficiency. Opals of similar radius periodically arranged on the structure will work as a rough surface. By enhancing the light extraction angle, the spontaneous emission from the active region can be emitted vertically. At the same time, opals with different radius and different refractive indexes are also studied. ITO, as the infiltration, is used to provide good lateral current spreading.The plane wave expansion (PWE), finite difference time domain,(FDTD), and rigorous coupled wave analysis (RCWA) methods are used to calculate the energy band structures and the extraction efficiency of the infiltrated opals layer. The scanning method and the Monte Carlo method are employed to optimize the structural parameters of the infiltrated opal layer. The infiltrated opals layer on the LED shows a high light extraction efficiency of over 60%.

Light Extraction Improvement of InGaN Light-Emitting Diodes with Large-Area Highly Ordered ITO Nanobowls Photonic Crystal Via Self-Assembled Nanosphere Lithography

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Enhancement of Light Extraction of GaN Light-Emitting Diode Using Opals Layer

Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts.

High-output power GaN-LED based on surface plasmon enhancement

Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal Without Electrical Performance Damages

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

Size-controllable Nanopyramids Photonic Crystal Selectively Grown on P-Gan for Enhanced Light-Extraction of Light-Emitting Diodes.

III-nitride ultraviolet, blue and green LEDs with SiO2 photonic crystals fabricated by UV-nanoimprint lithography

Large-Scale Sio2 Photonic Crystal for High Efficiency Gan Leds by Nanospherical-Lens Lithography

Enhanced Optical Power of GaN-based Light-Emitting Diode with Compound Photonic Crystals by Multiple-Exposure Nanosphere-Lens Lithography

Simulation of the Light Extraction Efficiency of Nanostructure Light-Emitting Diodes

Improved Light Extraction of Gan-Based Light-Emitting Diodes with Surface-Patterned Ito