Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

On the Efficiency Droop of Top-Down Etched Ingan/Gan Nanorod Light Emitting Diodes under Optical Pumping

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Light Extraction Improvement of InGaN Light-Emitting Diodes with Large-Area Highly Ordered ITO Nanobowls Photonic Crystal Via Self-Assembled Nanosphere Lithography

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improvement Of Color Conversion And Efficiency Droop In Hybrid Light-Emitting Diodes Utilizing An Efficient Non-Radiative Resonant Energy Transfer

Efficiency Droop Alleviation in Blue Light Emitting Diodes Using the Ingan/Gan Triangular-Shaped Quantum Well

High-output power GaN-LED based on surface plasmon enhancement

Practicable Alleviation Of Efficiency Droop Effect Using Surface Plasmon Coupling In Gan-Based Light Emitting Diodes

Efficiency Droop in Ingan/Gan Multiple-Quantum-Well Blue Light-Emitting Diodes Grown on Free-Standing Gan Substrate

Efficiency Droop Suppression of InGaN‐based Blue Light‐emitting Diodes Using Dip‐shaped Quantum Wells

An Improved Carrier Rate Model To Evaluate Internal Quantum Efficiency And Analyze Efficiency Droop Origin Of Ingan Based Light-Emitting Diodes

Investigation of Surface Plasmon Coupling with the Quantum Well for Reducing Efficiency Droop in GaN-based Light Emitting Diodes

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Efficiency Droop Effects of GaN-based Light-Emitting Diodes on the Performance of Code Division Multiple Access Visible-Light Communication System

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier