Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Investigation of Surface Plasmon Coupling with the Quantum Well for Reducing Efficiency Droop in GaN-based Light Emitting Diodes

Practicable Alleviation Of Efficiency Droop Effect Using Surface Plasmon Coupling In Gan-Based Light Emitting Diodes

Efficiency Droop Suppression of InGaN‐based Blue Light‐emitting Diodes Using Dip‐shaped Quantum Wells

Effect of the Band Structure of InGaN/GaN Quantum Well on the Surface Plasmon Enhanced Light-Emitting Diodes

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Efficiency Droop Alleviation in Blue Light Emitting Diodes Using the Ingan/Gan Triangular-Shaped Quantum Well

Investigation Of Surface-Plasmon Coupled Red Light Emitting Ingan/Gan Multi-Quantum Well With Ag Nanostructures Coated On Gan Surface

Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-well Blue Light-Emitting Diodes with Different Degree of Carrier Localization

High-output power GaN-LED based on surface plasmon enhancement

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

The Study on the Droop Effect in the InGaN/AlGaInN MQWs with Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Experimentally Study Electron Overflow from Quantum Wells into P-Side GaN and Its Effect on the Efficiency Droop in InGaN/GaN Blue-Light-emitting-diodes

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures

Efficiency Droop in Ingan/Gan Multiple-Quantum-Well Blue Light-Emitting Diodes Grown on Free-Standing Gan Substrate

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance