Abstract:Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decreases the expected gains in high-current external quantum efficiency. We study origins of these efficiency losses by correlating chip-level quantum efficiency measurements with structural and optical properties obtained using a combination of electron microscopy tools. The drop in quantum efficiency is not found to be correlated with quantum well (QW) width fluctuations. Rather, we show direct correlation between active region design, deep level defects, and delayed electron beam induced cathodoluminescence (CL) with characteristic rise time constants on the order of tens of seconds. We propose a model in which the electron beam fills deep level defect states and simultaneously drives reduction of the built-in field within the multi-quantum well active region, resulting in a delay in accumulation of carrier populations within the QWs. The CL measurements yield fundamental insights into carrier transport phenomena, efficiency-reducing defects, and quantum well band structure that are important in guiding future heterostructure process development.

Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-well Blue Light-Emitting Diodes with Different Degree of Carrier Localization

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.

An Improved Carrier Rate Model To Evaluate Internal Quantum Efficiency And Analyze Efficiency Droop Origin Of Ingan Based Light-Emitting Diodes

Study On Efficiency Droop In Ingan/Gan Light-Emitting Diodes Based On Differential Carrier Lifetime Analysis

A Differential Carrier Lifetime Analysis on GaN-based LED’s Quantum Efficiency

Efficiency Droop in Ingan/Gan Multiple-Quantum-Well Blue Light-Emitting Diodes Grown on Free-Standing Gan Substrate

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.

Efficiency Droop Alleviation in Blue Light Emitting Diodes Using the Ingan/Gan Triangular-Shaped Quantum Well

The Study on the Droop Effect in the InGaN/AlGaInN MQWs with Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Efficiency Droop Suppression of InGaN‐based Blue Light‐emitting Diodes Using Dip‐shaped Quantum Wells

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

Identifying the role of carrier overflow and injection current efficiency in GaN-based Micro-LED efficiency droop model

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization

Experimentally Study Electron Overflow from Quantum Wells into P-Side GaN and Its Effect on the Efficiency Droop in InGaN/GaN Blue-Light-emitting-diodes

Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures

Efficiency Droop Behavior of Direct Current Aged GaN-based Blue Light-Emitting Diodes

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods