Abstract:We numerically investigated the optical/electrical characteristics of blue light-emitting-diodes (LEDs) and developed some optimization strategies. Our aim is to increase the optical performance of LEDs at low current density (0.02–2 A cm−2) for micro-LEDs used in display applications. First, we investigated the effects of quantum well (QW) number in blue In0.225Ga0.775N/In0.10Ga0.90N LEDs. We found that at low current density LEDs with lower QW number have much higher internal quantum efficiency (IQE) than those with higher QW number. Second, we also numerically investigated the effects of the electron blocking layer, n-side quantum barrier (QB) doping concentration, QB material and QW width with single quantum well (SQW) structure. For SQW LEDs at low current density, the electron injection efficiency was nearly one. In terms of the QB doping concentration, we found that an appropriate n-side QB doping can ensure Shockley-Read-Hall recombination appropriately equal Auger recombination, which ultimately results in high IQE. For QB material, we choose In0.05Ga0.95N as QB material to achieve both high IQE and low forward voltage. Regarding the QW width, we found that although LEDs with wide QW had high IQE, there were also two peaks in the electroluminescence (EL) spectrum, thus 3 nm was used as an optimal QW width. The original 5-QW structure showed a lower IQE range from 50 to 80% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 3.06 V at 1 A cm−2. In contrast, our optimized LED structure achieved an IQE of 92.3% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 2.72 V at 1 A/cm2.

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

Study on Injection Efficiency in InGaN

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

High Power InGaN/GaN MQWs Blue LED with AlGaN/GaN Blocking Layers

Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-well Blue Light-Emitting Diodes with Different Degree of Carrier Localization

Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Efficiency Droop Suppression of InGaN‐based Blue Light‐emitting Diodes Using Dip‐shaped Quantum Wells

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

A Gan-Algan-Ingan Last Quantum Barrier in an Ingan/Gan Multiple-Quantum-Well Blue Led

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer

Effect of Mg-doping Adjacent to Active Region on the Efficiency of InGaN Blue MQW LED

Efficiency Droop Alleviation in Blue Light Emitting Diodes Using the Ingan/Gan Triangular-Shaped Quantum Well

Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Study on Electroluminescence Spectra of InxGa1－xN/GaN-MQWs Materials with High Indium Contents

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer