Abstract:In this research article, we propose an engineered electron blocking layer (EBL) structure to address the efficiency degradation in InGaN/GaN multiple quantum well cyan-micro-LEDs grown along a polar orientation at lower current density (1 A/cm²). The engineered EBL structures exhibit improved bandgap continuity that eliminates the creation of an energy pit in the conduction band and a spike in the valence band at the hetero-interface of EBL and the last barrier. Additionally, it targets the quantum-confined Stark effect (QCSE) caused by the electric field induced by polarization through the self-screening of induced polarization charges by grading the Al-composition in the AlGaN EBL along the growth orientation. The strategic EBL engineered structure (Sample B and C) generates polarization-induced bulk charges that effectively compensate for the polarization-induced interface charges and prevent the formation of a robust electric field-related QCSE. Consequently, simulation results for Sample C demonstrate an extraordinary reduction of 1016 times in electron leakage and a substantial improvement in hole injection efficiency compared to the traditional EBL structure (Sample A). The internal quantum efficiency is improved by ∼45%, with a 50% reduction in the required input operating voltage to reach 1 A/cm² compared to Sample A. Finally, efficiency droop at 200 A/cm² is reduced from 45% to 10%, demonstrating enhanced carrier confinement and resolution of electron leakage issues.

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Enhanced Performance of GaN Based Light-Emitting Diodes with a Low Temperature P-Gan Hole Injection Layer

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Excavating the Communication Performance in GaN-Based Green Micro-LEDs: Modular-Architectured p-Type Region

Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency

Optimized Growth of P-Type Algan Electron Blocking Layer in the Gan-Based Led

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer