Abstract:AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) are widely used in sterilization, sensing, water purification, medical treatment, non-line of sight (NLOS) communication and many other fields. Especially it has been reported that the global novel coronavirus (COVID-19) can be effectively inactivated by the DUV light with a wavelength below 280 nm (UVC) within a few seconds, which has also attracted great attention. However, the external quantum efficiency (EQE) of UVC LED is still at a low level, generally not more than 10%. As an important component of EQE, internal quantum efficiency (IQE) plays a crucial role in realizing high-performance DUV-LED. In order to improve the IQE of AlGaN-based DUV-LED, this work adopts an electron blocking layer (EBL) structure based on InAlGaN/AlGaN superlattice. The results show that the superlattice EBL structure can effectively improve the IQE compared with the traditional single-layer and double-layer EBL structure for the DUV-LED. On this basis, the optimization method based on JAYA intelligent algorithm for LED structure design is proposed in this work. Using the proposed design method, the InAlGaN/AlGaN superlattice EBL structure is further optimized to maximize the LED’s IQE. It is demonstrated that the optimized superlattice EBL structure is beneficial to not only the suppression of electron leakage but also the improvement of hole injection, leading to the increase of carrier recombination in the active region. As a result, the IQE of the DUV-LED at 200 mA injection current is 41.2% higher than that of the single-layer EBL structure. In addition, the optimized structure reduces IQE at high current from 25% to 4%. The optimization method based on intelligent algorithm can break through the limitation of the current LED structure design and provide a new method to improve the efficiency of AlGaN-based DUV-LED.

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

On the Electric-Field Reservoir for III-nitride Based Deep Ultraviolet Light-Emitting Diodes.

AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs

High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer

High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

AlGaN-Based DUV LEDs With Al-Composition-Engineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Intelligent Optimization Design of Electron Barrier Layer for AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes