Abstract:Abstract A comparable concentration of carriers injected and transported into the active region, that is, balanced hole and electron injection, significantly affects the optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this study, we introduce a novel structure characterized by a carrier injection balanced modulation layer, incorporating a polarization-regulating gradient p -AlGaN in a DUV LED. We conducted a systematic examination of its impact on the carrier injection and transport processes. Theoretical simulations demonstrate the mitigation of abrupt variations in Al content at the interface between electron blocking layer/ p -AlGaN and p -AlGaN/ p -GaN within the valence bands. Consequently, holes are more likely to be injected into the active region rather than accumulating at these interfaces. Meanwhile, due to the reduced barrier height at the top of the valence band, the holes were efficiently transported into the quantum well and confined with comparable and balanced concentrations of electrons by suppressing overflow, thereby promoting the radiative recombination rate. Compared with the conventional DUV LED, the hole concentration and radiative recombination rate of the designed structure in the final quantum well are significantly increased to 179.8% and 232.3%, respectively. The spontaneous emission intensity achieves nearly twice at the same current injection density. Moreover, the efficiency droop is significantly suppressed when operated at a gradually increasing current density. This study presents a promising approach that can serve as a reference for achieving high-efficiency AlGaN-based DUV LEDs.

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

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Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

Investigation of Quantum Structure in N-polar Deep-Ultraviolet Light-Emitting Diodes

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Al-composition Graded Quantum Wells

Band Engineering for Surface Emission Enhancement in Al-rich AlGaN-based Deep-Ultraviolet Light Emitting Diodes

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

Local Surface Plasmon Enhanced Polarization and Internal Quantum Efficiency of Deep Ultraviolet Emissions from AlGaN-based Quantum Wells

Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs

Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers