Abstract:Abstract A comparable concentration of carriers injected and transported into the active region, that is, balanced hole and electron injection, significantly affects the optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this study, we introduce a novel structure characterized by a carrier injection balanced modulation layer, incorporating a polarization-regulating gradient p -AlGaN in a DUV LED. We conducted a systematic examination of its impact on the carrier injection and transport processes. Theoretical simulations demonstrate the mitigation of abrupt variations in Al content at the interface between electron blocking layer/ p -AlGaN and p -AlGaN/ p -GaN within the valence bands. Consequently, holes are more likely to be injected into the active region rather than accumulating at these interfaces. Meanwhile, due to the reduced barrier height at the top of the valence band, the holes were efficiently transported into the quantum well and confined with comparable and balanced concentrations of electrons by suppressing overflow, thereby promoting the radiative recombination rate. Compared with the conventional DUV LED, the hole concentration and radiative recombination rate of the designed structure in the final quantum well are significantly increased to 179.8% and 232.3%, respectively. The spontaneous emission intensity achieves nearly twice at the same current injection density. Moreover, the efficiency droop is significantly suppressed when operated at a gradually increasing current density. This study presents a promising approach that can serve as a reference for achieving high-efficiency AlGaN-based DUV LEDs.

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Al-composition Graded Quantum Wells

Advantages of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Graded Quantum Structures in the Active Region

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Band Engineering for Surface Emission Enhancement in Al-rich AlGaN-based Deep-Ultraviolet Light Emitting Diodes

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

Surface Emission Enhancement for Deep Ultraviolet AlGaN-based LEDs Using Triangular Shaped Quantum Wells

Optimization of quantum well number of AlGaN/AlGaN deep-ultraviolet light-emitting diodes

Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously