Abstract:The achievement of high-efficiency AlGaN-based deep ultraviolet (DUV) emitters is greatly limited by the poor crystalline quality and negligible carrier localization effect of the Al-rich AlGaN quantum structures. Herein, we propose solving this long-standing issue via surface engineering. By changing the misorientations of sapphire substrates, Al(Ga)N epilayers obtained different step heights and shapes. Accordingly, surface-mediated dislocation climbing and surface adatom incorporation behaviors can be well regulated. Profiting from macrostep-mediated dislocation climbing behavior, dislocation inclination and interaction become more frequent. Thus, for the 1 mu m-thick AlN epilayers grown on C/A-4(degrees) and C/M-4(degrees) sapphire substrates, only a few mixed-type dislocations are found. However, this process also continuously induces tensile stress. To alleviate tensile stress and pursue efficient DUV emission, we constructed nominal quantum wells on 400 nm ultrathin step-bunched AlN epilayers. Interestingly, the different incorporation behaviors of Al and Ga adatoms induce the formation of quantum wells at the macrostep terraces and quantum wires at the macrostep edges, respectively. The excellent crystalline quality of the AlN/sapphire templates and the dominant luminescence of the high-density self-organized quantum wire array lead to a high internal quantum efficiency of 70%. This work paves the way for achieving high-efficiency devices on a low-cost ultrathin platform.

Surface Emission Enhancement for Deep Ultraviolet AlGaN-based LEDs Using Triangular Shaped Quantum Wells

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Band Engineering for Surface Emission Enhancement in Al-rich AlGaN-based Deep-Ultraviolet Light Emitting Diodes

Local Surface Plasmon Enhanced Polarization and Internal Quantum Efficiency of Deep Ultraviolet Emissions from AlGaN-based Quantum Wells

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

The Dependence of Light Extraction Improvement on Optimized Surface Microstructure for AlGaN-based UVC-LEDs Considering TM-polarized Emission

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

Deep ultraviolet AlGaN-multiple quantum wells with photoluminescence enhanced by topological corner state

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer