Abstract:AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210-280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

Band Engineering for Surface Emission Enhancement in Al-rich AlGaN-based Deep-Ultraviolet Light Emitting Diodes

Surface Emission Enhancement for Deep Ultraviolet AlGaN-based LEDs Using Triangular Shaped Quantum Wells

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Advantages of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Graded Quantum Structures in the Active Region

Polarization-engineered AlGaN Last Quantum Barrier for Efficient Deep-Ultraviolet Light-Emitting Diodes

Local Surface Plasmon Enhanced Polarization and Internal Quantum Efficiency of Deep Ultraviolet Emissions from AlGaN-based Quantum Wells

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Al-composition Graded Quantum Wells

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs