Abstract:The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVAUVC regions can be severely compromised due to the polarization difference (P) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work, the different situations of the bandgap difference (Eg) and P of InAlNAlGaN and AlGaNAlGaN heterojunctions fully strained on GaN and AlN substrates are discussed. It shows that the InAlNAlGaN heterojunctions could produce positive or negative sheet charges at the heterointerface under Eg >0, which could not be realized by the conventional AlGaNAlGaN heterojunctions. To demonstrate and utilize the feature, the polarization-modulated InAlN LQBs with 0.140.16 indium compositions of 320 nm UVB LEDs are designed and investigated. It is observed that the InAlN LQBs could replace the conventional AlGaN LQB to improve electron confinement and hole injection by affecting effective barrier heights. By modulating the LQBEBL polarization using InAlN, the proposed UV LED has a 32 enhancement in internal quantum efficiency and lower efficiency droop (from 16.9 to 0.7) compared with the conventional one without modulation. The operation voltage at the same current also significantly decreases. The improvement of optical output power and wall plug efficiency at 60 mA in proposed structures are near 90 and 100, respectively. This study provides a novel and highly effective methodology for development of high efficiency UV LEDs.

Band Engineering for Surface Emission Enhancement in Al-rich AlGaN-based Deep-Ultraviolet Light Emitting Diodes

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Surface Emission Enhancement for Deep Ultraviolet AlGaN-based LEDs Using Triangular Shaped Quantum Wells

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Local Surface Plasmon Enhanced Polarization and Internal Quantum Efficiency of Deep Ultraviolet Emissions from AlGaN-based Quantum Wells

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

The Dependence of Light Extraction Improvement on Optimized Surface Microstructure for AlGaN-based UVC-LEDs Considering TM-polarized Emission

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED