Abstract:The realization of p-type conduction in GaN and commercialized GaN light-emitting diodes (LED) is accepted as an advance in the development of human society. Conventionally, LED is based on PN junction and the quantum wells are introduced for confining electrons and holes, which improves the external quantum efficiency (EQE). Herein, we realized a graphene/AlGaN/GaN LED emitting double peaks at 430 nm and 560 nm. The blue peak at 430 nm is originated from the recombination process between holes injected from graphene/AlGaN heterostructure and electron produced from the tunnelling and avalanche multiplication process in p-type AlGaN/p-type GaN interface. Compared with the bare p-type AlGaN/GaN heterostructure without blue light emission, the graphene/p-AlGaN enhances the hole injection process through the band gap alignment and the mediate thickness of p-AlGaN is important taking the hole transport in AlGaN into consideration. The AlGaN/GaN interface confines the produced electrons and thus result in a high EQE of 55.8% under 5 mA current after intercalating an Al2O3 barrier at the interface between graphene and AlGaN/GaN. Moreover, the tunable graphene/AlGaN/GaN LED with different intensity of 430 nm has been demonstrated through changing the Fermi level of graphene by gating effect. The graphene/AlGaN heterostructure induced confinement effect can bring a novel type of LED, which can be optimized for special applications.

Optimized Growth of P-Type Algan Electron Blocking Layer in the Gan-Based Led

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Effect of P-Gan Layer on the Properties of Ingan/Gan Green Light-Emitting Diodes

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Enhanced Performance of GaInN LEDs by Abrupt Mg Doped P-Algan Electron Blocking Layer

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

Enhanced Performance of GaN Based Light-Emitting Diodes with a Low Temperature P-Gan Hole Injection Layer

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al x In y Ga 1– x – y N Electron Blocking Layer

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Excavating the Communication Performance in GaN-Based Green Micro-LEDs: Modular-Architectured p-Type Region

Structural And Optical Properties Of Nonpolar M-Plane Gan And Gan-Based Leds On Gamma-Lialo2

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO 6 substrates

Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes