Abstract:In this chapter, thin film GaN-based light emitting diodes (LEDs) fabricated into n-side-up and p-side-up LEDs on mirror-substrate structures using a combination of wafer bonding, laser lift-off and surface texturing techniques were described. The effects of Pd, ITO/Al, NiO/Ag, NiO/Ag/Ni, and NiO/Au/Ag mirrors on the n-side-up GaN/mirror/Si LED properties were studied. It was found that the characteristics of the vertical-conducting n-side-up GaN/mirror/Si LEDs with a NiO/Ag/Ni mirror structure showed the best performance than the other mirror ones. After the thermal anneal process, the specific contact resistance of NiO/Ag/Ni to p-GaN can be reduced. The output power of the n-side-up GaN/mirror/Si LED shows nearly three times in magnitude as compared with that of the original GaN/sapphire sample. On the other hand, the p-side-up GaN LEDs were fabricated using a combination of omni-directional reflector (ODR) and double-sided textured surface (both p-GaN and undoped-GaN) techniques. An Essential Macleod program was used to simulate the optimum thickness of the ODR structure. The reflectivity value of ODR structure used in work can reach 99%. On the top-side textured surface, the p-type GaN with hexagonal cavities was grown under low temperature (LT) conditions using metalorganic chemical vapor deposition. The GaN LED with a suitable LT p-GaN cap layer thickness was also studied. Experimental results indicate that the GaN LED sample with the 200-nm hexagonal cavity GaN layer on the surface exhibits a 50% enhancement in luminance intensity. The luminance efficiency can be improved. This indicates that the thin-film structure can enhance the light extraction efficiency of GaN-based LEDs, especially for large chip sizes.

Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed P-Type GaN Surface by Using Ni Nanoporous Template

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

GaN-based Blue LEDs with Microstructure on P-Gan Surface Formed by Inductively Coupled Plasma Etching

High-output power GaN-LED based on surface plasmon enhancement

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

Enhanced Performance of GaN Based Light-Emitting Diodes with a Low Temperature P-Gan Hole Injection Layer

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles

Thin-GaN LED Materials